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BSH205G2R is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET P-CH 20V 2A TO236AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSH205G2R
- Description：MOSFET P-CH 20V 2A TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V
- Rds On (Max) @ Id, Vgs：170mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：418 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：480mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSH205G2R
Single FETs, MOSFETs Overview
The Nexperia BSH205G2R is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology, housed in a SOT23 (TO-236AB) surface-mounted plastic package. It features a drain-source voltage rating of -20 V and a gate-source voltage limit of ±8 V. The device supports a continuous drain current of -2.3 A at 25 °C with a maximum on-state resistance of 170 mΩ at VGS = -4.5 V. Total power dissipation reaches 890 mW in free air. The component is qualified to the AEC-Q101 standard for automotive applications.
Single FETs, MOSFETs Feature Summary
- Trench MOSFET technology providing low threshold voltage and low on-state resistance
- Enhanced power dissipation capability suitable for compact designs
- Qualified to AEC-Q101 standards for automotive reliability
Single FETs, MOSFETs Applications
- Relay driver circuits
- High-speed line drivers
- High-side load switches
- General switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'R' against the manufacturer's official ordering information to confirm packaging details such as reel size or tape specifications. Ensure the requested part number matches the exact marking code '%KB' defined in the datasheet. Confirm that the application environment remains within the specified junction temperature range of -55 °C to 150 °C to maintain performance integrity.
Single FETs, MOSFETs Selection Notes
Select this component when a small SOT23 footprint is required for P-channel switching applications. The low on-state resistance minimizes conduction losses in high-current paths. Consider the thermal resistance characteristics if operating near the maximum power dissipation limits. Verify that the gate drive voltage aligns with the specified VGS thresholds for optimal switching performance.
Single FETs, MOSFETs Part Context
This device belongs to Nexperia's portfolio of discrete semiconductors designed for efficient power management. The BSH205G2 variant specifically targets applications requiring robust switching capabilities in limited space. Its qualification under automotive standards expands its utility beyond consumer electronics into more demanding industrial and vehicular environments.
Single FETs, MOSFETs Replacement Considerations
Consult the official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters to ensure compatibility before implementation.
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