BSL211SP

Single FETs, MOSFETs Overview

The BSL211SP is a single-channel P-Channel MOSFET from Infineon's OptiMOS P family, designed for low-side switching applications. It features a -20V drain-source breakdown voltage and supports a continuous drain current of -4.7A. The device exhibits a maximum on-resistance of 94 mOhms at Vgs = -4.5V. It operates within an extended temperature range from -55°C to +150°C junction temperature. Key electrical characteristics include a gate charge of 8.3 nC and a threshold voltage ranging from -0.6V to -1.2V. The component utilizes a TSOP-6 surface-mount package with a power dissipation rating of 2W.

Single FETs, MOSFETs Feature Summary

• OptiMOS P technology integration for optimized performance in low-side switching
• Enhancement mode operation with logic-level gate drive compatibility
• High thermal stability supporting extended operating temperatures up to 150°C

Single FETs, MOSFETs Applications

• Low-side load switching in automotive electronics
• General purpose power management circuits
• Battery protection and load control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and tape/reel specifications against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and material content declarations as required by your supply chain standards. Ensure the TSOP-6 package dimensions match your PCB footprint design guidelines. Cross-reference the part number with official Infineon distribution channels to guarantee authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component when a robust P-Channel solution with high current capability is required for low-voltage applications. The 94 mOhm on-resistance offers a balance between conduction losses and cost. Consider the -20V rating for systems operating near or below 12V. The TSOP-6 package is suitable for space-constrained designs requiring efficient heat dissipation. Evaluate the gate charge requirements against your driver capabilities to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS P series, which represents Infineon's advanced p-channel power MOSFET technology. The series focuses on delivering high reliability and efficiency for various industrial and automotive applications. The BSL211SP specifically targets scenarios needing reliable low-side switching with moderate current handling. It complements other components in power management architectures where compact packaging and thermal resilience are critical.

Single FETs, MOSFETs Replacement Considerations

Consult Infineon's official cross-reference documentation for verified substitute part numbers. Ensure any replacement maintains identical pinout configuration and package type (TSOP-6). Verify that alternative devices meet or exceed the -20V voltage rating and -4.7A current capacity. Check for equivalent on-resistance and thermal performance characteristics to maintain system integrity.