BSL215CH6327XTSA1

Overview

The BSL215CH6327XTSA1 is a complementary small signal transistor featuring N-channel and P-channel enhancement mode MOSFETs in a PG-TSOP-6 package. It supports continuous drain currents of ±1.5 A at 25°C, with maximum drain-source voltages of ±20 V. The device exhibits low on-state resistance (140 mΩ for N-channel, 150 mΩ for P-channel at VGS=±4.5 V) and is rated for avalanche energy up to 11 mJ. Qualified under AEC-Q101, it operates within a temperature range of -55°C to +150°C.

Feature Summary

• Complementary dual configuration integrating both N-channel and P-channel transistors
• Super logic level capability enabling direct drive from 2.5V microcontrollers
• Avalanche rated for robustness against transient voltage spikes
• Automotive grade qualification compliant with AEC-Q101 standards

Applications

• Low-side and high-side switching in automotive electronic control units
• Load switching applications requiring fast response times
• Power management circuits in battery-operated devices
• General purpose signal switching in telecommunications equipment

Procurement Notes

Verify the specific ordering suffix H6327XTSA1 matches the required tape and reel quantity of 3000 pieces per reel. Confirm that the component meets RoHS compliance and halogen-free requirements as specified by IEC61249-2-21. Ensure the PG-TSOP-6 package footprint aligns with the design layout constraints before finalizing procurement orders.

Selection Notes

Select this component when a compact solution requires matched N and P channel characteristics in a single package. The super logic level feature makes it suitable for low-voltage control systems. Consider the thermal resistance and power dissipation limits relative to the ambient operating conditions to ensure reliable performance in space-constrained designs.

Part Context

This part belongs to Infineon's OptiMOS™2 and OptiMOS™-P small signal transistor family. These components are designed for applications demanding high efficiency and low on-resistance. The BSL215C variant specifically offers a complementary pair, providing designers with a balanced solution for push-pull or bridge configurations in modern electronic systems.

Replacement Considerations

Direct replacements must maintain the PG-TSOP-6 package and complementary N/P channel configuration. Verify that substitute parts meet the same ±20V breakdown voltage and ±1.5A current ratings. Ensure compatibility with AEC-Q101 automotive qualification if used in vehicle electronics.

FAQ

What is the maximum avalanche energy rating for the BSL215C?

The component is rated for an avalanche energy of 11 mJ for the P-channel and 3.7 mJ for the N-channel, measured at ID=-1.5A and ID=1.5A respectively with RGS=25 Ohms.

Is the BSL215CH6327XTSA1 suitable for automotive applications?

Yes, the device is qualified according to AEC-Q101 standards, making it suitable for use in automotive electronic systems.

What is the typical gate threshold voltage range for the N-channel transistor?

The gate threshold voltage for the N-channel transistor ranges from 0.7V to 1.2V, with a typical value of 0.95V, measured at IDS=3.7µA.