BSL303SPEH6327XTSA1

Description：MOSFET P-CH 30V 6.3A TSOP-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:d99b171f1cdf Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSL303SPEH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 6.3A TSOP-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSL303SPEH6327XTSA1

Description：MOSFET P-CH 30V 6.3A TSOP-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：33mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id：2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs：20.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1401 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TSOP6-6
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for BSL303SPEH6327XTSA1

BSL303SPEH6327XTSA1

Single FETs, MOSFETs Overview

The BSL303SPEH6327XTSA1 is a P-channel OptiMOS™ power transistor with a -30V drain-source voltage and -6.3A continuous current rating in a PG-TSOP-6 package. It features an on-resistance of 33mΩ at VGS=-10V and 52mΩ at VGS=-4.5V, supporting logic-level operation. The device includes avalanche energy ratings (EAS=30mJ), ESD protection (HBM 2kV-4kV), and reverse diode characteristics including a forward voltage of 1.1V max and reverse recovery time of 49ns. Operating temperature ranges from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

OptiMOS™ technology providing enhanced switching performance and low conduction losses
Logic level gate drive capability rated for 4.5V operation
Integrated avalanche ruggedness for robust transient handling
ESD protected structure compliant with JESD22-A114 standards

Single FETs, MOSFETs Applications

Industrial motor control circuits
Automotive load switching applications
Power management modules requiring high reliability
Multimarket power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific suffix H6327XTSA1 matches the required tape and reel packaging configuration. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet. Check for any recent product change notices regarding manufacturing location or material composition updates.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with high current capacity (-6.3A) and low on-resistance is required for automotive or industrial environments. Consider the -30V breakdown voltage and logic-level threshold for compatibility with standard microcontroller outputs. Evaluate thermal resistance values based on the specific PCB footprint and cooling area available in the design.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ family, designed for power transistor applications. It utilizes silicon technology within a surface-mount TSOP-6 package. The component is qualified according to AEC-Q101 standards, indicating suitability for demanding automotive and multimarket environments where long-term stability and reliability are critical.