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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 2.3A TSOP6-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.3A
- Rds On (Max) @ Id, Vgs：57mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：275pF @ 15V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：PG-TSOP6-6
- Grade：-
- Qualification：-
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Overview
The BSL306NL6327HTSA1 is an N-channel enhancement mode Gallium Nitride (GaN) field-effect transistor manufactured by Infineon Technologies. It utilizes a TSOP-6 surface-mount package with dimensions of 2.9mm length and 1.1mm height. The device features a drain-source breakdown voltage (Vds) of 20V and supports a continuous drain current (Id) of 7.5A. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 22 milliohms, a gate-source voltage range of -12V to +12V, and a power dissipation rating of 2W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Utilizes Gallium Nitride (GaN) technology for high-frequency switching capabilities
- Features low on-resistance to minimize conduction losses
- Designed for compact surface-mount integration in space-constrained applications
Applications
- High-efficiency DC-DC converters
- Power factor correction circuits
- Synchronous rectification stages
Procurement Notes
Verify the specific suffix L6327 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm availability status as distribution channels may list this component as obsolete or end-of-life. Ensure compatibility with standard SMD reflow profiles for the TSOP-6 package during assembly.
Selection Notes
Select this component for designs requiring low-voltage, high-current GaN performance. Compare Rds(on) and thermal resistance against silicon MOSFET alternatives for efficiency gains. Verify that the 20V voltage rating aligns with the system's maximum operating conditions and transient spikes.
Part Context
This part belongs to Infineon's BSL series of GaN transistors. The series is engineered to replace traditional silicon devices in power management applications, offering faster switching speeds and reduced heat generation. The TSOP-6 package provides a compact footprint suitable for modern electronic devices.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data. Consult Infineon's official selection guides for direct replacements or pin-compatible alternatives.
