BSL307SPL6327HTSA1

Single FETs, MOSFETs Overview

The BSL307SPL6327HTSA1 is a single P-channel enhancement-mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TSOP-6 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 5.5 A at 25°C. Key electrical characteristics include a maximum on-resistance of 52 mΩ, a gate-source voltage rating of ±20 V, and a threshold voltage of 1.5 V. The component operates within a temperature range of -55°C to +150°C with a power dissipation capacity of 2 W.

Single FETs, MOSFETs Feature Summary

• Single P-channel configuration for efficient switching applications
• Low on-resistance design for reduced conduction losses
• Automotive-grade qualification ensuring reliability in harsh environments

Single FETs, MOSFETs Applications

• Power management circuits in automotive electronics
• Load switching applications requiring high current handling
• DC-DC converter topologies utilizing P-channel devices

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix L6327HTSA1 against official Infineon documentation to confirm exact tape-and-reel specifications and RoHS compliance status. Ensure compatibility with standard SMD reflow profiles and check for any recent product change notices affecting packaging or material composition before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a robust P-channel solution is required for automotive-grade applications. The 30V rating and 5.5A current capability suit low-voltage DC distribution systems. Consider the TSOP-6 footprint constraints and thermal management requirements associated with the 2W power dissipation limit during circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the BSL307 series of OptiMOS™ power transistors designed by Infineon. The series focuses on providing optimized performance for automotive and industrial markets. The specific model integrates advanced silicon gate technology to deliver high efficiency and ruggedness within a compact surface-mount form factor suitable for automated assembly.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic equivalents may not match the specific automotive qualification or precise electrical parameters of the original component.