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BSL307SPT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 5.5A TSOP-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSL307SPT
- Description：MOSFET P-CH 30V 5.5A TSOP-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：43mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：805 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSOP6-6
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for BSL307SPT
Single FETs, MOSFETs Overview
The BSL307SPT is a single P-channel enhancement-mode MOSFET from the OptiMOS-P family, manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TSOP-6 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 5.5 A at 25°C. Key electrical parameters include a maximum on-resistance of 52 mΩ at 10 V gate drive and a typical gate charge of 23.4 nC. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 2 W.
Single FETs, MOSFETs Feature Summary
- OptiMOS-P technology providing optimized performance for small-signal switching applications
- Low on-resistance characteristics suitable for efficient power management
- Automotive qualification compliant with AEC-Q101 standards
Single FETs, MOSFETs Applications
- Power distribution circuits in automotive electronics
- Load switching for peripheral devices
- Battery protection modules
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official documentation to confirm tape and reel specifications. Ensure the ordering part number matches the required packaging format. Confirm RoHS compliance status through the manufacturer's certificate. Cross-reference the full part number with the latest datasheet revision to validate pinout and thermal characteristics before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a compact P-channel switch with low conduction losses. The TSOP-6 package offers a small footprint for space-constrained PCB layouts. Consider the 30 V rating for low-voltage systems and verify that the 5.5 A current capability meets the load requirements under expected thermal conditions.
Single FETs, MOSFETs Part Context
This component belongs to the BSL307 series of OptiMOS-P transistors. The series is designed for high-efficiency switching in automotive and industrial applications. The specific model integrates advanced silicon gate technology to minimize switching losses while maintaining robust reliability standards required for critical electronic systems.
Single FETs, MOSFETs Replacement Considerations
Consult the official cross-reference list for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions. Verify that alternative components meet the same AEC-Q101 automotive qualification requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
