BSL314PEH6327XTSA1

Overview

The BSL314PEH6327XTSA1 is an OptiMOS-P 3 dual P-channel small-signal transistor in a PG-TSOP-6 package. It features a drain-source breakdown voltage of -30 V and a continuous drain current of -1.5 A at 25 °C. The device has a maximum on-state resistance of 140 mΩ at VGS=-10 V and 230 mΩ at VGS=-4.5 V. It operates within a temperature range of -55 °C to +150 °C, supports pulsed currents up to -6.1 A, and includes avalanche energy ratings of 6 mJ.

Feature Summary

• Dual P-channel configuration with enhancement mode operation
• Logic level compatibility rated for 4.5 V gate drive
• Integrated ESD protection meeting HBM standards
• Qualified for automotive applications under AEC-Q101

Applications

• Automotive load switching circuits
• Low-side power management modules
• Logic-level controlled signal routing

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel quantities and packaging specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance and halogen-free status requirements match project specifications before finalizing procurement orders.

Selection Notes

Select this component when dual independent P-channel switching is required in a compact surface-mount footprint. The logic-level rating enables direct interfacing with standard microcontrollers without additional gate drivers. Consider the thermal resistance characteristics and PCB copper area requirements for adequate heat dissipation during continuous operation.

Part Context

This part belongs to the BSL314 series of OptiMOS-P 3 transistors designed for low-voltage switching applications. The PG-TSOP-6 package provides a compact solution for space-constrained designs. The H6327 suffix indicates specific manufacturing lot tracking and reel packaging parameters defined by Infineon Technologies.

Replacement Considerations

Direct substitutes include the BSS314PEH6327XTSA1 single-channel variant or other OptiMOS-P 3 devices with matching PG-TSOP-6 footprints. Verify pinout compatibility and electrical parameter margins before implementing any cross-model replacements.

FAQ

What is the maximum avalanche energy rating?

The device supports a single-pulse avalanche energy of 6 mJ when driven at -1.5 A with a 25 Ω gate resistance.

Does the component support reverse diode switching?

Yes, it includes an integrated body diode with a continuous forward current rating of -0.5 A and a reverse recovery time of 12.5 ns.

Is the device suitable for high-frequency applications?

The total gate charge is 2.9 nC, and turn-on delay is 5.1 ns, supporting efficient switching in moderate-frequency power management circuits.