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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 1.5A TSOP6-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.5A
- Rds On (Max) @ Id, Vgs：150mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：2.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：282pF @ 15V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：PG-TSOP6-6
- Grade：-
- Qualification：-
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Overview
The BSL315PL6327HTSA1 is a dual P-channel OptiMOS-P 2 small-signal transistor in a PG-TSOP-6 package. It features a drain-source breakdown voltage of -30 V and continuous drain current of -1.5 A at 25 °C. The device has a maximum on-state resistance of 150 mΩ at VGS=10 V and 270 mΩ at VGS=4.5 V. It supports pulsed drain currents up to -6 A, operates within a temperature range of -55 °C to +150 °C, and dissipates 0.5 W. The component is avalanche rated with an energy capability of 11 mJ.
Feature Summary
- Dual P-channel configuration with enhancement mode operation
- Logic level compatibility rated for 4.5 V gate drive
- Avalanche rated for robust transient handling
- Qualified according to AEC-Q101 automotive standards
Applications
- Low-side switching applications
- Load switch circuits
- Power management modules
- Automotive electronic control units
Procurement Notes
Verify the specific ordering suffix H6327 against official Infineon documentation to confirm tape and reel packaging specifications. Ensure the component meets AEC-Q101 qualification requirements if intended for automotive deployment. Cross-reference the full part number with manufacturer databases to validate current production status and availability constraints.
Selection Notes
Select this component for designs requiring dual P-channel logic-level switching in a compact surface-mount footprint. Evaluate thermal performance based on the 250 K/W junction-to-ambient resistance under minimal PCB footprint conditions. Confirm that the 150 mΩ on-resistance at 10 V gate drive aligns with system efficiency targets.
Part Context
This component belongs to the BSL315P series from Infineon Technologies. It utilizes OptiMOS-P 2 technology to provide optimized small-signal performance. The device is designed for general-purpose switching tasks where low on-resistance and high reliability are required in space-constrained environments.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Verify pinout compatibility and electrical parameter alignment before substituting.
