BSL316CL6327HTSA1

Description：MOSFET N/P-CH 30V 1.4A TSOP6-6
Series：OptiMOS™

SKU:2699e37f4651 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 1.4A TSOP6-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：1.4A, 1.5A
Rds On (Max) @ Id, Vgs：160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id：2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：94pF @ 15V
Power - Max：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：PG-TSOP6-6
Grade：-
Qualification：-

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BSL316CL6327HTSA1

Overview

The BSL316CL6327HTSA1 is a dual MOSFET from Infineon Technologies, integrating N-channel and P-channel enhancement mode transistors in a TSOP-6 surface-mount package. It features a drain-source breakdown voltage of 30 V and continuous drain currents of 1.4 A. The device exhibits low on-resistance values of 160 mOhms for the N-channel and 150 mOhms for the P-channel. Gate-source voltage limits are specified at ±20 V, with gate charges of 600 pC and 2.4 nC respectively. Power dissipation is rated at 500 mW, operating within a temperature range of -55 °C to +150 °C.

Feature Summary

Integrates complementary N-channel and P-channel MOSFETs into a single compact component
Provides low on-resistance characteristics for efficient power switching applications
Supports high-temperature operation up to 150 °C junction temperature

Applications

Low-side and high-side switching circuits
Motor control interfaces
Power management modules

Procurement Notes

Verify the exact part number suffix against official Infineon documentation, as availability may vary by region. Confirm RoHS compliance status and automotive qualification requirements before integration. Check for obsolescence notices or lifecycle changes directly from the manufacturer. Ensure supply chain sources provide valid traceability data for quality assurance purposes.

Selection Notes

Select this component when space-constrained designs require both N-type and P-type switching capabilities. The TSOP-6 package offers a small footprint suitable for dense PCB layouts. Evaluate thermal performance based on the 500 mW dissipation rating under expected load conditions. Compare on-resistance specifications against system efficiency targets to ensure optimal voltage drop performance.

Part Context

This device belongs to the BSL316 series of dual MOSFETs designed for general-purpose switching tasks. It utilizes silicon technology to deliver reliable performance in consumer and industrial electronics. The integration of complementary channels simplifies circuit design by reducing component count and board area requirements compared to discrete solutions.