ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSL802SNH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 7.5A TSOP-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSL802SNH6327XTSA1
- Description：MOSFET N-CH 20V 7.5A TSOP-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.5V
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 2.5V
- Vgs(th) (Max) @ Id：750mV @ 30µA
- Gate Charge (Qg) (Max) @ Vgs：4.7 nC @ 2.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1347 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSOP6-6
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for BSL802SNH6327XTSA1
Single FETs, MOSFETs Overview
The BSL802SNH6327XTSA1 is an N-channel enhancement mode OptiMOS™2 small-signal transistor in a PG-TSOP6 package. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 7.5 A at 25 °C, with a pulsed capability of 30 A. The device is rated for ultra-logic level operation at 1.8 V, exhibiting a maximum on-state resistance of 31 mΩ under these conditions. It includes avalanche rating capabilities and meets AEC-Q101 automotive qualification standards.
Single FETs, MOSFETs Feature Summary
- Ultra Logic level gate drive capability rated for 1.8 V operation
- Avalanche rated for robust energy handling
- Automotive qualified according to AEC-Q101 standards
Single FETs, MOSFETs Applications
- Low-side switching applications requiring logic-level drive
- Automotive electronic systems
- Power management circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure that the component's thermal characteristics align with the intended PCB footprint and cooling area requirements specified in the datasheet.
Single FETs, MOSFETs Selection Notes
Select this component when low gate charge and high current handling are required in a compact surface-mount package. The 1.8 V logic level compatibility makes it suitable for microcontroller-driven interfaces. Consider the thermal resistance values relative to the available copper area for heat dissipation during continuous operation.
Single FETs, MOSFETs Part Context
This part belongs to the BSL802SN series within Infineon's OptiMOS™2 portfolio. It is designed as a small-signal MOSFET offering a balance between low on-resistance and fast switching speeds. The PG-TSOP6 package provides efficient thermal performance for its size.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume cross-compatibility with other OptiMOS generations without verifying pinout and electrical parameter alignment.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
