BSL806NL6327HTSA1

Description：MOSFET 2N-CH 20V 2.3A TSOP6-6
Series：OptiMOS™

SKU:25eb79b3a250 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 2.3A TSOP6-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.3A
Rds On (Max) @ Id, Vgs：57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id：750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs：1.7nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds：259pF @ 10V
Power - Max：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：PG-TSOP6-6
Grade：-
Qualification：-

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BSL806NL6327HTSA1

Overview

The BSL806NL6327HTSA1 is an OptiMOS™2 small-signal transistor featuring dual N-channel enhancement mode MOSFETs in a PG-TSOP6 package. It supports a continuous drain current of 2.3 A and a pulsed drain current of 9.3 A at 25 °C. The device has a maximum drain-source voltage of 20 V and gate-source voltage of ±8 V. On-state resistance is 57 mΩ max at VGS=2.5V and 82 mΩ max at VGS=1.8V. Total power dissipation is 0.5 W at 25 °C, with an operating temperature range from -55 °C to 150 °C.

Feature Summary

Dual N-channel configuration within a single compact surface-mount package
Ultra Logic level operation rated for 1.8 V gate drive
Avalanche energy capability rated at 10.8 mJ under specified conditions
Qualified according to AEC-Q101 automotive standards

Applications

Low-side switching in automotive electronic control units
Load switching applications requiring ultra-low logic level drive
Power management circuits in battery-powered devices

Procurement Notes

Verify the complete part number including the H6327 tape and reel suffix against official Infineon documentation to ensure correct packaging specifications. Confirm that the PG-TSOP6 footprint matches the design layout requirements. Ensure compliance with RoHS and halogen-free standards as stated in the datasheet before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a minimal footprint. The 1.8 V rating makes it suitable for low-voltage logic interfaces. Verify thermal constraints carefully due to the 0.5 W total power dissipation limit. Consider the avalanche rating if inductive load switching is present in the circuit design.

Part Context

This component belongs to the BSL806N series of OptiMOS™2 small-signal transistors manufactured by Infineon Technologies. It utilizes silicon MOSFET technology optimized for low on-resistance and fast switching speeds. The specific ordering code includes packaging details indicating a standard tape and reel format for automated assembly processes.