BSM080D12P2C008

$270.93

Description：MOSFET 2N-CH 1200V 80A MODULE
Series：-

SKU:e4bc271ff751 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 80A MODULE
Series：-
Mfr：Rohm Semiconductor
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：4V @ 13.2mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：800pF @ 10V
Power - Max：600W
Operating Temperature：175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Grade：-
Qualification：-

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BSM080D12P2C008

Overview

The BSM080D12P2C008 is a half-bridge module from ROHM Semiconductor, integrating Silicon Carbide (SiC) DMOSFET and SiC-SBD components. It features dual N-channel configuration with a drain-source breakdown voltage of 1200V and continuous drain current of 80A at case temperature. The device operates within a junction temperature range of -40°C to +150°C, supporting high-speed switching with typical turn-on and turn-off delays of 80ns and 300ns respectively. Designed for chassis mounting, it offers low surge capability and reduced switching losses.

Feature Summary

Integrates SiC DMOSFET and SiC-SBD in a single half-bridge configuration
Provides low switching loss and high-speed operation capabilities
Features low surge tolerance for robust performance under transient conditions

Applications

Electric vehicle powertrains
Industrial motor drives
Renewable energy inverters

Procurement Notes

Verify the specific ordering suffix matches the required electrical characteristics and package variant. Confirm that the component is sourced from authorized distributors to ensure authenticity. Check datasheet revisions for any updates to thermal or electrical parameters before integration into final designs.

Selection Notes

Select this module when high efficiency and compact size are critical due to SiC material properties. Consider the 1200V rating and 80A current capacity against system requirements. Ensure gate drive compatibility with the specified threshold voltages and switching speeds for optimal performance.

Part Context

This component belongs to ROHM's BSMx series of SiC power modules, designed for high-power density applications. It represents a shift towards wide-bandgap semiconductors to improve energy conversion efficiency compared to traditional silicon-based solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official ROHM catalogs for direct replacements with matching electrical and mechanical specifications.