BSM150GB170DN2E3256HDLA1

Overview

The BSM150GB170DN2E3256HDLA1 is a power module from Infineon's E3 series, integrating three IGBTs with anti-parallel diodes in a half-bridge configuration. It features a 1700V blocking voltage and a nominal collector current of 150A at 25°C case temperature. The device utilizes CoolSiC technology for the diodes, offering low switching losses and high thermal efficiency. Key electrical parameters include a maximum DC collector current of 150A, a gate-emitter voltage limit of ±20V, and a junction temperature range from -40°C to +175°C. The module employs a press-fit termination method for robust mechanical connection.

Feature Summary

• Integration of IGBT and SiC diode technologies for optimized switching performance
• Press-fit termination ensuring reliable mechanical and electrical connections without soldering
• High thermal conductivity design supporting efficient heat dissipation in demanding environments

Applications

• Industrial motor drives and servo systems
• Uninterruptible power supplies (UPS)
• Induction heating equipment

Procurement Notes

Verify the specific suffix 'E3256HDLA1' against official Infineon documentation to confirm exact pinout and thermal characteristics. Ensure compatibility with existing PCB layouts or busbar designs due to the press-fit termination requirement. Cross-reference the date code and lot number for quality assurance. Confirm that the operating environment stays within the specified junction temperature limits to maintain reliability.

Selection Notes

Select this component when high efficiency and compact size are critical for medium-power applications. The combination of IGBT and SiC diode offers a balance between cost and performance. Consider the thermal resistance values provided in the datasheet for heatsink sizing. Verify that the gate drive circuitry can handle the specified gate charge and voltage levels safely.

Part Context

This module belongs to Infineon's E3 series, which focuses on combining silicon IGBTs with silicon carbide diodes. This series aims to reduce system size and improve efficiency compared to traditional all-silicon solutions. The E3 series is designed for applications requiring high power density and robust operation under varying load conditions.

Replacement Considerations

Direct replacements must match the 1700V/150A rating and half-bridge topology. Check for identical package dimensions and pin configurations to ensure mechanical fit. Verify that alternative components support press-fit termination if the original design relies on it. Consult Infineon's replacement guide for officially qualified substitutes.