BSM150GB60DLCHOSA1

BSM150GB60DLCHOSA1

  • Description:IGBT MOD 600V 180A 595W
  • Series:-

SKU:7181f0ff6dee Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 600V 180A 595W
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 150A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):180 A
  • Power - Max:595 W
  • Current - Collector Cutoff (Max):500 µA
  • Input Capacitance (Cies) @ Vce:6.5 nF @ 25 V

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BSM150GB60DLCHOSA1

Overview

The BSM150GB60DLCHOSA1 is a dual IGBT module manufactured by Infineon Technologies. It features a 600V collector-emitter voltage rating and a continuous collector current of 150A at 25°C, with a maximum repetitive peak current of 300A. The device utilizes the HOSA1 package variant, which provides an isolated case connection for thermal management via flange mounting. This configuration supports series-connected elements with built-in freewheeling diodes, designed for high-power switching applications requiring robust electrical isolation and efficient heat dissipation.

Feature Summary

  • Dual IGBT structure integrated with complementary freewheeling diodes for bridge leg configurations
  • Isolated base plate design enabling direct thermal coupling to external cooling systems
  • High short-circuit withstand capability ensuring protection during fault conditions

Applications

  • Industrial motor drives and variable frequency drives
  • Uninterruptible power supplies (UPS) and inverter systems
  • Switched-mode power supplies for high-power equipment

Procurement Notes

Verify the specific suffix HOSA1 against official Infineon documentation to confirm pinout compatibility and mechanical dimensions. Ensure that the sourcing channel provides original manufacturer packaging to prevent counterfeit components. Cross-reference the manufacturing date code with reliability guidelines to validate storage life before assembly.

Selection Notes

Select this component when designing circuits requiring 600V blocking voltage and moderate current handling up to 150A. Evaluate the thermal resistance characteristics to determine appropriate heatsink requirements. Confirm that the gate drive voltage specifications align with standard control logic levels to ensure reliable switching performance without overvoltage risks.

Part Context

This module belongs to the BSM series of insulated gate bipolar transistors from Infineon. The series is engineered for industrial power electronics, offering a balance of low conduction losses and fast switching speeds. The GB designation typically indicates specific chip technology optimized for general industrial applications within the 600V voltage class.

Replacement Considerations

Direct replacements include other Infineon dual IGBT modules with identical 600V/150A ratings and compatible pinouts, such as variants from the BSM or FZ series. Verify mechanical footprint and terminal arrangement before substitution to ensure board compatibility.

BSM150GB60DLCHOSA1BSM150GB60DLCHOSA1

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