BSM180C12P3C202

Single FETs, MOSFETs Overview

The BSM180C12P3C202 is a dual-channel Silicon Carbide (SiC) MOSFET module manufactured by ROHM Semiconductor. It features an N-channel configuration with a drain-source breakdown voltage of 1200V and a continuous drain current rating of 204A. The device utilizes the C-type housing package, designed for screw mounting. Key electrical parameters include a maximum power dissipation of 1.36kW and a junction temperature range from -40°C to +175°C. This component belongs to the BSMx series, engineered for high-efficiency power conversion applications requiring low switching losses and high-speed operation.

Single FETs, MOSFETs Feature Summary

• Utilizes Silicon Carbide (SiC) technology for superior thermal conductivity and high-temperature performance compared to silicon alternatives.
• Features a C-type housing package designed for robust mechanical stability and efficient heat dissipation in industrial environments.
• Optimized for low surge and low switching loss characteristics, enabling high-speed switching capabilities.
• Incorporates reduced temperature dependence to maintain stable performance across varying operating conditions.

Single FETs, MOSFETs Applications

• High-frequency power conversion systems utilizing SiC MOSFETs
• Industrial motor drives and inverters requiring high efficiency
• Evaluation and development of gate driver circuits for full SiC modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'C202' against official ROHM documentation to confirm exact manufacturing lot or revision details. Ensure compatibility with C-type housing evaluation boards such as the BSMGD3C12D24-EVK001 for proper testing. Confirm RoHS compliance status and check for any obsolescence notices, as some related BSM series components may be marked as non-recommended for new designs.

Single FETs, MOSFETs Selection Notes

Select this module when designing systems that require 1200V blocking capability and high current handling in a compact form factor. The C-type package is suitable for applications needing screw-mount installation. Consider the associated gate driver requirements, specifically those compatible with the second-generation SiC-MOSFET architecture housed in C-type enclosures, to ensure optimal driving safety and performance.

Single FETs, MOSFETs Part Context

This component is part of the BSMx series of Silicon Carbide power modules from ROHM Semiconductor. It shares architectural similarities with other BSM series devices but is distinguished by its specific C-type housing and electrical ratings. The series is designed to support advanced power electronics applications where efficiency and thermal management are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Users should consult official ROHM documentation for cross-reference information or contact the manufacturer directly for approved replacements.