BSM180D12P2C101

$338.89

Description：MOSFET 2N-CH 1200V 204A MODULE
Series：-

SKU:aa193ef94d7d Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 204A MODULE
Series：-
Mfr：Rohm Semiconductor
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：204A (Tc)
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：23000pF @ 10V
Power - Max：1130W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：-
Package / Case：Module
Supplier Device Package：Module
Grade：-
Qualification：-

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BSM180D12P2C101

Overview

The BSM180D12P2C101 is a half-bridge SiC power module manufactured by ROHM Semiconductor. It integrates Silicon Carbide DMOSFETs and Schottky barrier diodes within a C-type housing. The device supports a drain-source voltage of 1200V and a continuous drain current of 204A at Tc=60°C. Total power dissipation reaches 1360W at Tc=25°C, with a maximum junction temperature of 175°C. Key electrical parameters include a typical on-state voltage of 2.3V at 25°C and an internal gate resistance of 1.15Ω.

Feature Summary

Low surge and low switching loss characteristics
High-speed switching capability
Reduced temperature dependence

Applications

Motor drive systems
Inverter and converter circuits
Photovoltaic and wind power generation
Induction heating equipment

Procurement Notes

Verify the latest specifications directly with ROHM sales representatives before purchasing or implementation. Confirm RoHS compliance status through official channels. Ensure that the ordering suffix matches the required package type and pin configuration for your specific design requirements.

Selection Notes

Select this component for applications requiring high-power density and efficient thermal management. Consider the 175°C maximum junction temperature rating for high-temperature operation. Evaluate the stray inductance values to optimize gate drive circuitry and minimize voltage overshoot during switching transitions.

Part Context

This module belongs to ROHM's SiC Power Module series utilizing C-type packaging. It is designed as a half-bridge configuration containing both the SiC-DMOS switch and the complementary SiC-SBD. The construction allows for direct mounting to heat sinks using specified torque values for reliable thermal contact.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing absolute maximum ratings and thermal resistance values against alternative modules.