BSM180D12P2E002

Overview

The BSM180D12P2E002 is a silicon carbide (SiC) power module manufactured by ROHM Semiconductor. It features a half-bridge configuration with a drain-source voltage of 1200V and a continuous drain current of 180A. The device has a total power dissipation of 1360W and supports a maximum junction temperature of 175°C. It utilizes the E-type package, measuring 152.0x62.0mm with a thickness of 18.0mm. Designed for high-speed switching, it offers low surge capability and reduced temperature dependence.

Feature Summary

• High-speed switching capability with low switching loss
• Low surge tolerance for robust operation
• Reduced temperature dependence for stable performance

Applications

• High-frequency power conversion systems
• Industrial motor drives
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific revision suffix to ensure compatibility with existing designs. Confirm that the E-type housing matches the thermal interface requirements of the heat sink assembly. Check RoHS compliance status if required by local regulations. Ensure gate driver specifications align with the module's switching characteristics.

Selection Notes

Select this module when a 1200V SiC half-bridge is required for high-efficiency applications. Consider the 180A current rating against peak load demands. Evaluate the E-type package dimensions for PCB layout constraints. Compare thermal resistance values against alternative packages for cooling system design.

Part Context

This component belongs to ROHM's second-generation SiC MOSFET module lineup. It shares the E-type housing form factor with other modules in the series, facilitating standardized mechanical integration. The D12 designation indicates the 1200V voltage class common across multiple current ratings in this family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal pad alignment before considering any cross-brand alternatives.