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The BSM200GA120DN2HOSA1 is a single IGBT module from Infineon's DN2 series, designed for industrial power applications. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 200 A at 25°C case temperature. The device utilizes standard NPT technology with a typical saturation voltage of 2.5 V at 25°C. Packaged in the EasyPACK 2B form factor, it integrates an anti-parallel fast recovery diode to support half-bridge configurations.
Verify authenticity through authorized distributors or official Infineon channels. Confirm the specific suffix HOSA1 matches project requirements as packaging variations may exist. Request original manufacturer documentation to validate component integrity before integration into critical power systems.
Select this module for applications requiring 1200 V blocking capability and 200 A current handling. Ensure the cooling solution supports the thermal resistance characteristics of the EasyPACK 2B package. Verify gate drive compatibility with the specified switching parameters for optimal efficiency.
This component belongs to the DN2 series within Infineon's portfolio, characterized by standard switching speeds and robust industrial reliability. It serves as a core switching element in medium-power conversion topologies, balancing cost-effectiveness with proven performance metrics for general-purpose industrial electronics.
Direct replacements include other DN2 series modules such as BSM300GA120DN2 or BSM400GA120DN2 for higher current needs. Cross-series substitution requires careful evaluation of pinout compatibility and thermal interface dimensions to ensure mechanical fit.