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The BSM25GD120DN2E3224BPSA1 is a silicon Insulated Gate Bipolar Transistor (IGBT) power module manufactured by Infineon Technologies. It features a hex configuration with six elements and built-in diodes, housed in an EconoPACK 2 flange mount package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.7 V and a gate-emitter leakage current of 150 nA. The module has a power dissipation rating of 280 W and operates within a temperature range of -40°C to +150°C.
Verify the specific suffix BPSA1 against official Infineon documentation, as standard listings often reference the E3224 variant. Confirm RoHS compliance status and check for End-of-Life notifications or discontinuance notices prior to procurement. Ensure the supplier provides valid traceability documents matching the manufacturer's part identification.
Select this component for applications requiring a 1200V rated three-phase bridge with moderate current handling capabilities. Consider the 2.7V saturation voltage for efficiency calculations at rated load. Verify that the cooling solution can manage the 280W power dissipation within the specified operating temperature limits.
This module belongs to the DN2 series of IGBT modules from Infineon, characterized by standard switching frequencies between 10 kHz and 20 kHz. It is part of the broader EconoPACK family, designed for industrial power conversion. The BPSA1 suffix typically denotes specific ordering or packaging variations within the product line.
Direct replacements may include other DN2 series modules with similar voltage and current ratings, such as BSM25GB120DN2. Cross-reference pinouts and thermal characteristics carefully when substituting.