BSM300C12P3E301

$728.57

Description：SICFET N-CH 1200V 300A MODULE
Series：-
Mfr：Rohm Semiconductor
Package：Bulk

SKU:7a54a8ea0478 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSM300C12P3E301 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is SICFET N-CH 1200V 300A MODULE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSM300C12P3E301

Description：SICFET N-CH 1200V 300A MODULE
Series：-
Mfr：Rohm Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：5.6V @ 80mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1360W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：Module
Package / Case：Module

Single FETs, MOSFETs datasheet and documents for BSM300C12P3E301

BSM300C12P3E301

Single FETs, MOSFETs Overview

The BSM300C12P3E301 is a Silicon Carbide (SiC) power module manufactured by ROHM Semiconductor. It features an N-Channel configuration with a drain-source breakdown voltage of 1.2 kV and a continuous drain current rating of 300 A at case temperature. The device supports a maximum power dissipation of 1360 W and operates within a junction temperature range up to 150°C. Key electrical parameters include a gate-source threshold voltage maximum of 5.6 V, a forward voltage of 1.6 V, and a typical turn-on delay time of 40 ns. This component is designed for high-efficiency switching applications requiring robust thermal performance.

Single FETs, MOSFETs Feature Summary

Utilizes Silicon Carbide technology to achieve low surge and low switching losses.
Enables high-speed switching capabilities for efficient power conversion.
Features reduced temperature dependence for stable operation under varying thermal conditions.

Single FETs, MOSFETs Applications

High-performance chopper modules
Industrial motor drives
Uninterruptible power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes when sourcing this component. Confirm that the received part matches the exact model number BSM300C12P3E301 to ensure compatibility with design specifications. Check for RoHS compliance status as indicated in official documentation. Ensure proper handling procedures are followed due to the sensitive nature of semiconductor devices.

Single FETs, MOSFETs Selection Notes

Select this module for applications demanding high current capacity and fast switching speeds. The SiC construction offers advantages over traditional silicon in terms of efficiency and thermal management. Consider the 1.2 kV voltage rating and 300 A current capability when designing circuits. Evaluate the thermal requirements against the 1360 W dissipation rating to determine adequate heat sinking solutions.

Single FETs, MOSFETs Part Context

This component belongs to ROHM's series of Silicon Carbide MOSFET modules. These modules are engineered for high-power density applications where efficiency and reliability are critical. The integration of SiC technology allows for smaller form factors and improved performance compared to conventional silicon-based alternatives in similar power ranges.

Single FETs, MOSFETs Replacement Considerations

Consult official ROHM documentation for qualified replacement parts or alternative models within the same product family. Ensure any substitute maintains compatible voltage, current, and thermal specifications. Verify pinout and mounting dimensions before implementation.