BSM300D12P2E001

BSM300D12P2E001

$603.88
  • Description:MOSFET 2N-CH 1200V 300A MODULE
  • Series:-

SKU:2624aac40e1b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 1200V 300A MODULE
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:300A (Tc)
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:4V @ 68mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:35000pF @ 10V
  • Power - Max:1875W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Grade:-
  • Qualification:-

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BSM300D12P2E001

Overview

The BSM300D12P2E001 is a silicon carbide (SiC) power module manufactured by ROHM Semiconductor. It features an E-type half-bridge package containing two N-channel SiC MOSFETs. The device supports a drain-source voltage of 1200 V and a continuous drain current of 300 A. Total power dissipation reaches 1875 W, with a maximum junction temperature of 175°C. The physical dimensions are 152.0 mm x 62.0 mm with a thickness of 18.0 mm.

Feature Summary

  • Utilizes second-generation SiC-MOSFET technology for high-speed switching capabilities.
  • Designed to achieve low surge currents and reduced switching losses.
  • Exhibits reduced temperature dependence for stable performance.

Applications

  • Evaluation using the BSMGD2G12D24-EVK001 gate driver board
  • Integration with snubber modules for circuit protection

Procurement Notes

Verify supply status before procurement as this component is designated as not recommended for new designs. Confirm that ordering suffixes do not alter functional specifications unless explicitly documented in official datasheets. Ensure compliance with RoHS requirements and check minimum packing quantities during acquisition.

Selection Notes

Select this module for applications requiring high thermal stability and fast switching speeds within the E-type housing form factor. Consider the 175°C maximum junction temperature limit when designing thermal management systems. Verify compatibility with appropriate gate driver boards such as the BSMGD2G12D24-EVK001 for optimal operation.

Part Context

This part belongs to ROHM's SiC Power Module series utilizing second-generation SiC-MOSFETs. It shares the E-type package architecture with other variants like the G-type BSM300D12P4G101. The module is categorized under discrete and power modules for industrial and automotive power electronics.

Replacement Considerations

The BD5240G-1 is listed as a similar level replacement with the same package for voltage detectors, but no direct equivalent is confirmed for this specific SiC power module. Check for updated ROHM series replacements if available.

BSM300D12P2E001BSM300D12P2E001
$603.88
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