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The BSM300D12P2E001 is a silicon carbide (SiC) power module manufactured by ROHM Semiconductor. It features an E-type half-bridge package containing two N-channel SiC MOSFETs. The device supports a drain-source voltage of 1200 V and a continuous drain current of 300 A. Total power dissipation reaches 1875 W, with a maximum junction temperature of 175°C. The physical dimensions are 152.0 mm x 62.0 mm with a thickness of 18.0 mm.
Verify supply status before procurement as this component is designated as not recommended for new designs. Confirm that ordering suffixes do not alter functional specifications unless explicitly documented in official datasheets. Ensure compliance with RoHS requirements and check minimum packing quantities during acquisition.
Select this module for applications requiring high thermal stability and fast switching speeds within the E-type housing form factor. Consider the 175°C maximum junction temperature limit when designing thermal management systems. Verify compatibility with appropriate gate driver boards such as the BSMGD2G12D24-EVK001 for optimal operation.
This part belongs to ROHM's SiC Power Module series utilizing second-generation SiC-MOSFETs. It shares the E-type package architecture with other variants like the G-type BSM300D12P4G101. The module is categorized under discrete and power modules for industrial and automotive power electronics.
The BD5240G-1 is listed as a similar level replacement with the same package for voltage detectors, but no direct equivalent is confirmed for this specific SiC power module. Check for updated ROHM series replacements if available.