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The BSM35GD120DN2 is a 1200 V, 50 A IGBT power module in the EconoPACK 2 package. It integrates a three-phase full-bridge with fast free-wheel diodes and features an insulated metal base plate. The collector-emitter saturation voltage is 2.7 V at 25 °C and 3.2 V at 125 °C. Maximum ratings include a DC collector current of 50 A at 80 °C case temperature, a pulsed current of 100 A, and a maximum junction temperature of +150 °C. Power dissipation reaches 280 W at 25 °C.
Verify the specific ordering code C67076-A2506-A67 against official Infineon documentation to ensure correct component revision. Confirm that the application environment remains within the specified insulation test voltage of 2500 Vac and climatic category limits. Cross-reference datasheet parameters for thermal resistance and safe operating area before finalizing system design.
Select this module for applications requiring high voltage blocking and moderate current handling in compact footprints. Evaluate the thermal impedance characteristics to ensure adequate heat sinking for the 280 W dissipation rating. Consider the switching speed and gate threshold voltage when designing the driver circuitry for optimal performance and reliability.
This component belongs to the BSM series of IGBT modules manufactured by Infineon Technologies. It utilizes TRENCHSTOP technology to balance low conduction losses with manageable switching behavior. The EconoPACK 2 housing provides a standardized form factor widely adopted in industrial power electronics for ease of mounting and integration.
The E3224 suffix variant (BSM35GD120DN2E3224) represents a lead-free version of this module. Verify pinout compatibility and thermal interface requirements when substituting between standard and lead-free packaging variants.