BSM35GD120DN2E3224BPSA1

Description：LOW POWER ECONO AG-ECONO2A-211
Series：-

SKU:0167d39a1047 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：LOW POWER ECONO AG-ECONO2A-211
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：Full Bridge
Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 35A
Input：Standard
NTC Thermistor：No
Operating Temperature：150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-ECONO2B
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Power - Max：280 W
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：2 nF @ 25 V

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BSM35GD120DN2E3224BPSA1

Overview

The BSM35GD120DN2E3224BPSA1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies. It features a six-element bridge configuration with built-in diodes housed in an EconoPACK 2 flange mount package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. Key electrical parameters include a saturation voltage of 2.7 V, a power dissipation rating of 280 W, and a gate-emitter leakage current of 150 nA. The operational temperature range spans from -40°C to +150°C.

Feature Summary

Six-element bridge configuration with integrated freewheeling diodes
High thermal stability suitable for demanding industrial environments
Robust mechanical design utilizing screw mount flange installation

Applications

Industrial motor drives and inverters
Uninterruptible power supply (UPS) systems
Medium-power welding equipment

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact revision status. Cross-reference part numbers such as BSM35GD120DN2E3224 to ensure compatibility with existing system designs. Confirm RoHS compliance details directly with the supplier or manufacturer datasheet prior to procurement.

Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling within a compact form factor. Ensure the cooling solution accommodates the 280 W power dissipation limit. Verify that the drive circuitry provides appropriate gate voltage levels within the specified 20 V maximum rating.

Part Context

This module belongs to Infineon's IGBT Silicon Modules product line, specifically designed for power conversion applications. It utilizes silicon technology to deliver reliable performance in high-power switching scenarios. The EconoPACK 2 packaging standardizes mounting dimensions for widespread integration into various power electronic architectures.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides for verified alternatives.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.