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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 447A MODULE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Box
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：447A (Tc)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：4.8V @ 218.4mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：44000pF @ 10V
- Power - Max：1.45kW (Tc)
- Operating Temperature：175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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Overview
The BSM450D12P4G102 is a half-bridge SiC power module utilizing ROHM's UMOSFET technology. It features a 1200V drain-source voltage rating and a continuous drain current of 447A at Tc=60°C with VGS=18V. The device supports a maximum junction temperature of 175°C and offers a total power dissipation of 900W. Key electrical parameters include an on-state voltage of 1.5V (typical) at 25°C, a gate threshold voltage range of 2.8V to 4.8V, and switching times such as turn-on delay of 30ns and rise time of 43ns under standard test conditions.
Feature Summary
- Low surge and low switching loss characteristics for efficient operation.
- Capable of high-speed switching performance.
- Reduced temperature dependence in electrical parameters.
Applications
- Motor drive systems
- Inverter and converter circuits
- Photovoltaic and wind power generation equipment
- Induction heating equipment
Procurement Notes
Verify the latest specifications directly with ROHM sales representatives before purchasing, as product information is subject to change without notice. Confirm RoHS compliance status and specific packaging details through official channels. Ensure that the ordering suffix matches the required configuration, as variations may exist within the product line.
Selection Notes
Select this module for applications requiring high current handling and fast switching speeds. Consider the thermal resistance values when designing heat sink solutions to maintain junction temperatures below 175°C. Account for the short-circuit withstand capability limitations inherent to SiC devices by implementing appropriate protection circuits.
Part Context
This component belongs to ROHM's full SiC power module lineup, specifically designed for industrial power conversion. It integrates SiC UMOSFETs into a compact half-bridge package, offering improved power density compared to traditional silicon-based modules. The G-type housing facilitates mounting via M6 screws for main terminals.
Replacement Considerations
Consult ROHM technical support for direct replacements or pin-compatible alternatives. Verify that any substitute part meets the same voltage, current, and thermal requirements. Cross-referencing with similar BSM series modules may provide options with different current ratings or packaging styles.
