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Product Detailed Parameters
- Description：IGBT MOD 1200V 78A 400W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：78 A
- Power - Max：400 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：3.3 nF @ 25 V
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Overview
The BSM50GAL120DN2HOSA1 is a single-switch IGBT module manufactured by Infineon Technologies, designed for high-power applications. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 78A at 25°C. The device utilizes Silicon technology and is housed in an E2 package with chassis mount installation. Key electrical parameters include a maximum gate-emitter voltage of ±20V and a power dissipation capacity of 400W. The operational temperature range spans from -40°C to +125°C junction temperature.
Feature Summary
- Single-switch configuration providing dedicated control for individual power legs
- High-voltage capability suitable for demanding industrial power conversion systems
- Robust thermal management design supporting significant power dissipation levels
Applications
- Industrial motor drives requiring high-current single-phase control
- Uninterruptible power supply (UPS) systems utilizing single-switch topologies
- High-frequency induction heating equipment components
Procurement Notes
Verify the specific suffix HOSA1 against official Infineon documentation to confirm exact pinout and mechanical dimensions. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Ensure that the chassis mounting requirements align with your thermal interface material specifications before finalizing procurement orders.
Selection Notes
Select this component when a single-switch topology is required rather than a full bridge or dual configuration. Evaluate the 78A current rating against peak load demands to ensure adequate safety margins. Consider the E2 package dimensions for PCB layout constraints and verify that the 1200V rating exceeds the maximum circuit voltage spikes.
Part Context
This module belongs to Infineon's MED POWER series, which focuses on medium-power density solutions. The E2 package offers a compact form factor compared to larger EconoPIM modules while maintaining high current handling capabilities. It serves as a discrete power switching element within broader inverter or converter assemblies.
Replacement Considerations
Direct replacements must match the 1200V/78A single-switch specification and E2 package footprint. Verify compatibility with existing gate drive circuits due to potential variations in threshold voltages among different generation IGBTs.
FAQ
Is this module a full bridge or single switch?
It is a single-switch module containing one IGBT die.
What is the maximum junction temperature?
The maximum operating junction temperature is +125°C.
