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The BSM50GD120DN2BOSA1 is a six-element three-phase full-bridge IGBT power module manufactured by Infineon Technologies. It utilizes EconoPACK 2K packaging with an insulated metal base plate for thermal management. The device features N-channel IGBTs integrated with fast free-wheeling diodes, rated for a collector-emitter voltage of 1200 V and a maximum DC collector current of 72 A at 25 °C case temperature. The module supports a maximum junction temperature of 150 °C and includes 17 terminals for connection.
Verify the specific ordering code C67076-A2514-A67 against official Infineon documentation to confirm availability and revision status. Ensure that the component matches the required electrical ratings and package dimensions for your application before procurement.
Select this module for applications requiring a robust three-phase bridge solution with high current capacity. Consider the 72 A continuous current rating at 25 °C and the 1200 V blocking voltage when designing the thermal management system to ensure operation within the 150 °C maximum junction temperature limit.
This component belongs to the BSM series of IGBT power modules from Infineon Technologies. It is part of the EconoPACK family, designed for compact integration in medium-power industrial applications. The module combines IGBT switches with anti-parallel diodes to facilitate efficient AC/DC and DC/AC conversion.
Check for direct replacements such as the BSM50GD120DN2 or updated revisions like BSM35GD120DN2E3224 if pin compatibility and electrical parameters align. Verify datasheet updates for any changes in thermal characteristics or mechanical dimensions before substitution.