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The BSM50GP60BOSA1 is a silicon IGBT module manufactured by Infineon Technologies, belonging to the EconoPIM2 series. It features a hex configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 70 A at 25°C. The saturation voltage is 2.2 V, and power dissipation reaches 250 W. Operating temperatures range from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V. The component utilizes screw mount installation within an EconoPIM2 package.
Verify part authenticity through authorized channels as this component may be subject to obsolescence. Confirm RoHS compliance status and specific ordering suffixes against official datasheets before procurement. Ensure supply chain partners provide traceability documentation to mitigate risks associated with discontinued or limited availability inventory.
Select this module for applications requiring 600V isolation and moderate current handling within a compact form factor. Evaluate thermal resistance requirements against the 250W dissipation limit. Compare alternative configurations such as full bridge variants if circuit topology demands differ. Ensure gate drive compatibility with the specified 20V maximum rating.
This component is part of Infineon's broader EconoPIM family, designed for power conversion efficiency. It shares architectural similarities with other modules like the BSM50GP120 but differs in voltage ratings and package dimensions. The BOSA1 suffix indicates specific manufacturing and testing standards defined by the original equipment manufacturer.
Public confirmed substitute part numbers include BSM50GP60.