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The BSM50GP60GBOSA1 is a silicon IGBT module manufactured by Infineon Technologies, belonging to the EconoDUAL family. It features a Hex configuration and is housed in an EconoDUAL2 package with screw mount installation. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 70 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a gate-emitter leakage current of 300 nA, and a maximum power dissipation of 250 W. The operating temperature range spans from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.
Verify the exact part number suffix against official Infineon documentation, as variations such as BOSA1 may exist. Confirm availability status, as this component may be discontinued or subject to limited supply. Ensure compliance with RoHS directives if required by your specific application standards before procurement.
Select this module based on its 600V rating and 70A continuous current capability. Consider the 2.2V saturation voltage for conduction loss calculations. Verify that the EconoDUAL2 footprint matches your PCB design and that the thermal resistance allows for adequate heat sinking within the specified 125°C junction temperature limit.
This component is part of Infineon's broader EconoDUAL series of power modules. It shares common packaging and interface characteristics with other devices in the line but is distinguished by its specific 600V/70A ratings and Hex topology. It serves as a discrete solution compared to larger PIM configurations like the BSM50GP60.
Check for direct replacements within the same EconoDUAL2 family with identical pinouts and ratings. Cross-reference with newer generations of Infineon IGBT modules that offer improved switching characteristics while maintaining mechanical compatibility.