SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BSM50GX120DN2BPSA1 is an IGBT power module manufactured by Infineon Technologies. It features a PIM (Power Integrated Module) configuration with a full bridge topology. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25 °C. It utilizes the EconoPIM3 package for screw mounting. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a collector-emitter saturation voltage of 2.5 V, and a power dissipation rating of 360 W.
Verify the specific ordering suffix against official Infineon documentation to confirm exact technical specifications and packaging details. Confirm component availability status as distribution channels may list obsolete or end-of-life inventory. Ensure compatibility with required thermal interface materials and mounting hardware for the EconoPIM3 form factor before finalizing procurement orders.
Select this module for applications requiring high-voltage isolation and integrated rectification in a compact footprint. The 1200 V rating suits medium-power industrial environments. Evaluate thermal resistance requirements relative to the 360 W dissipation limit. Consider the 50 A current capacity against peak load demands to ensure reliable operation within safe operating areas.
This component belongs to Infineon's EconoPIM series, designed for three-phase power conversion. It combines switching elements and freewheeling diodes to simplify circuit layout. The module replaces discrete component assemblies, reducing parasitic inductance and improving system reliability in high-frequency power electronics applications.
BSM50GP120