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BSM600C12P3G201 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is SICFET N-CH 1200V 600A MODULE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSM600C12P3G201
- Description：SICFET N-CH 1200V 600A MODULE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tray
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：600A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：5.6V @ 182mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：+22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：28000 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2460W (Tc)
- Operating Temperature：175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：Module
- Package / Case：Module
Single FETs, MOSFETs datasheet and documents for BSM600C12P3G201
Single FETs, MOSFETs Overview
The BSM600C12P3G201 is a screw-mount IGBT module manufactured by Rohm Semiconductor. It belongs to the P3 series, which utilizes CoolPak 3 packaging technology designed for high power density and thermal efficiency. The device integrates an IGBT chip with a fast recovery anti-parallel diode in a single insulated package. This configuration supports robust switching performance suitable for demanding industrial applications requiring reliable power conversion.
Single FETs, MOSFETs Feature Summary
- Integrates IGBT and anti-parallel diode for compact power stage design
- Utilizes CoolPak 3 packaging for enhanced thermal dissipation
- Features screw-mount installation for secure mechanical fixation
Single FETs, MOSFETs Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix G201 against official Rohm documentation to confirm exact manufacturing lot or tape-and-reel specifications. Ensure compatibility with gate driver requirements for the P3 series. Confirm that the CoolPak 3 footprint matches the target PCB layout before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when high current handling and efficient heat transfer are required in a screw-mount form factor. Compare thermal resistance values against alternative modules in the same voltage class. Verify that the switching speed characteristics align with the electromagnetic interference constraints of the target system design.
Single FETs, MOSFETs Part Context
This module is part of Rohm's broader portfolio of power semiconductor devices focused on energy efficiency. The P3 series represents an evolution in packaging technology aimed at reducing parasitic inductance. It serves as a critical component in modern power electronics architectures where space constraints and thermal management are primary design drivers.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for direct equivalents within the BSM series. Cross-reference pinouts and thermal pad dimensions with alternative manufacturers such as Infineon or Mitsubishi Electric if sourcing constraints exist.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
