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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 600A MODULE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：600A (Tc)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：5.6V @ 182mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：31000pF @ 10V
- Power - Max：2450W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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Overview
The BSM600D12P3G001 is a full Silicon Carbide (SiC) power module manufactured by ROHM Semiconductor. It features a half-bridge configuration with two N-channel SiC MOSFETs. The device supports a drain-source voltage of 1200V and a continuous drain current of 400A. Key electrical parameters include a maximum power dissipation of 1875W, a junction temperature range up to 175°C, and a storage temperature range from -40°C to 125°C. The module utilizes screw mount installation within a G-type housing measuring 152.0mm x 62.0mm with a thickness of 18.0mm.
Feature Summary
- Utilizes high-reliability Silicon Carbide technology for low switching loss and reduced temperature dependence.
- Designed for high-speed switching applications in industrial power conversion systems.
- Features a robust G-type package structure optimized for thermal management and mechanical stability.
Applications
- Industrial inverters for motor drives
- Power converters for renewable energy systems
- Uninterruptible Power Supplies (UPS)
- Induction heating equipment
Procurement Notes
Verify the specific suffix 'G001' against official ROHM documentation to confirm availability status, as related models like BSM600D12P3 may have different lifecycle statuses such as 'Not Recommended for New Designs'. Ensure compatibility with gate driver boards like BSMGD3G12D24-EVK001 for optimal performance validation during procurement planning.
Selection Notes
Select this component for applications requiring high current handling at 1200V ratings. Confirm that the system design accommodates the 175°C maximum junction temperature capability. Verify that the mounting infrastructure supports the specified G-type package dimensions and screw mount requirements for proper thermal interface implementation.
Part Context
This part belongs to ROHM's BSM series of full SiC power modules, which are engineered for high-efficiency power conversion. The P3 designation typically indicates a specific generation or packaging variant within the 1200V class, designed to replace older silicon-based solutions with superior switching characteristics and thermal performance.
Replacement Considerations
Direct substitutes should be sought within the ROHM BSM600D12P3 family. Cross-vendor replacements require careful evaluation of pinout compatibility, thermal resistance values, and switching speed characteristics to ensure circuit integrity without redesign.
