BSM75GAR120DN2HOSA1

Overview

The BSM75GAR120DN2HOSA1 is a high-speed IGBT power module from Infineon Technologies, utilizing the HighSpeed 2 technology platform. It features a single IGBT with a built-in diode in a half-bridge configuration. The device is rated for a collector-emitter voltage of 1200 V and a nominal collector current of 75 A. It employs a flange-mount package design suitable for industrial thermal management requirements.

Feature Summary

• High switching speed performance enabled by HighSpeed 2 technology
• Integrated freewheeling diode within a single half-bridge topology
• Robust flange-mount construction for efficient heat dissipation

Applications

• Industrial motor drives
• Medium-power inverters
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific suffix HOSA1 against official Infineon documentation to confirm material composition and compliance status. Ensure the ordering part number matches the exact revision required for your bill of materials. Cross-reference the datasheet version to validate electrical characteristics before procurement.

Selection Notes

Select this module when a 1200 V rating and 75 A continuous current capability are required in a compact form factor. Consider the thermal resistance specifications relative to your heatsink design. Verify that the gate drive requirements align with the HighSpeed 2 technology switching characteristics.

Part Context

This component belongs to the BSM series of IGBT modules, which are designed for general-purpose power conversion applications. The series offers a balance of switching speed and conduction efficiency. It serves as a core switching element in systems requiring reliable high-voltage DC to AC or AC to DC conversion.

Replacement Considerations

Direct replacements include BSM75GAL120DN2 and BSM75GB120DN2. Verify pinout compatibility and thermal interface dimensions before substitution. Check if the alternative variant meets the specific switching speed requirements of the original design.