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Product Detailed Parameters
- Description：IGBT MODULE
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The BSM75GB120DN2_E3223C-SE is a power module from Infineon's E3 series, featuring CoolSiC MOSFET technology. It integrates two 1200V silicon carbide MOSFETs in a half-bridge configuration within an industry-standard footprint. The device offers low on-resistance and fast switching capabilities, designed for high-efficiency applications. Key electrical parameters include a drain-source voltage of 1200V and a continuous collector current rating suitable for industrial inverters. The module utilizes advanced packaging to minimize parasitic inductance and improve thermal performance.
Feature Summary
- Integration of Silicon Carbide (SiC) MOSFETs for enhanced efficiency
- Half-bridge topology with integrated anti-parallel diodes
- Optimized thermal design for high-power density applications
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
Procurement Notes
Verify the specific suffix E3223C-SE against official Infineon documentation to ensure correct pinout and thermal interface specifications. Confirm that the component matches the required voltage and current ratings for the target circuit design before procurement.
Selection Notes
Select this module for applications requiring high-frequency switching and reduced system size. Ensure the cooling solution meets the thermal resistance requirements specified in the datasheet. Verify compatibility with gate drive circuits due to the specific threshold voltages of SiC devices.
Part Context
This part belongs to Infineon's E3 series of SiC modules, which are designed to replace traditional silicon IGBT solutions. The series aims to provide higher efficiency and power density in compact form factors for modern power electronics systems.
Replacement Considerations
Direct replacements may be limited due to specific SiC characteristics. Check for equivalent models from Infineon or other manufacturers offering similar 1200V SiC half-bridge configurations with compatible mechanical dimensions.
