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The BSM75GD120DLCBOSA1 is a dual IGBT power module manufactured by Infineon Technologies, belonging to the EconoPACK 3 family. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 75 A at 25°C. The module utilizes NPT (Non-Punch Through) technology for robust operation. Key electrical parameters include a maximum DC collector current of 75 A, a short-circuit withstand time of 10 µs, and a typical on-state voltage of 2.4 V at 75 A. The package supports baseplate mounting with a thermal resistance from junction to case of approximately 0.6 K/W.
Verify the specific suffix BOSA1 against official Infineon documentation to confirm RoHS compliance status and any minor manufacturing variations. Ensure the ordering part number matches the exact datasheet revision required for your design. Cross-reference with authorized distributors to confirm current availability and lead times, as component status may change.
Select this module for applications requiring a balance of high current density and low thermal resistance in a compact footprint. Compare the 75 A rating and 1200 V blocking capability against system requirements. Evaluate the thermal interface material compatibility with the baseplate for optimal heat dissipation. Consider gate drive requirements compatible with the module's input capacitance and switching characteristics.
This component is part of Infineon's EconoPACK 3 series, designed for high-power density applications. It succeeds earlier EconoPACK generations by offering improved thermal performance and mechanical robustness. The BSM75GD120DLC variant specifically targets industrial power conversion needs where space constraints and efficiency are critical factors.
Direct replacements within the same family include BSM75GD120DLC or BSM75GD120DL. Verify pinout compatibility and thermal specifications when substituting. Check if updated revisions like BOSA1 offer specific regulatory certifications required for your market.