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The Infineon Technologies BSM75GD60DLCBOSA1 is a six-pack IGBT module featuring integrated anti-parallel diodes. It provides a collector-emitter voltage of 600 V and supports a nominal DC collector current of 75 A at 70°C case temperature, or 95 A at 25°C. The module includes an NTC thermistor for thermal monitoring. Key electrical parameters include a maximum repetitive peak collector current of 150 A, a total power dissipation of 330 W at 25°C, and a gate-emitter peak voltage of ±20 V. The insulation test voltage is 2.5 kV RMS.
Verify the specific ordering suffix against official documentation to confirm package variations or tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest release notes. Ensure that the component matches the exact part number required for your bill of materials to avoid functional discrepancies in high-power applications.
Select this module based on its 600 V rating and 75 A continuous current capacity suitable for medium-power industrial applications. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle. Consider the switching energy losses and gate threshold voltage when designing the driver circuitry for optimal efficiency and reliability.
This component belongs to the BSM series of IGBT modules manufactured by Infineon Technologies, originally developed under the EUPEC brand. The series is designed for robust performance in demanding power electronics environments. The specific model integrates advanced trench technology for low conduction losses while maintaining high blocking capabilities.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs before considering alternative components from other manufacturers.