BSN20-7

Single FETs, MOSFETs Overview

The BSN20-7 is an N-channel enhancement mode field-effect transistor manufactured by Diodes Incorporated. It features a drain-source breakdown voltage of 50 V and a gate-source voltage rating of ±20 V. The device supports a continuous drain current of 500 mA at 25°C ambient temperature, with a maximum power dissipation of 600 mW at the same temperature. The static drain-source on-resistance is specified as 1.8 Ω at a gate-source voltage of 10 V and 2.0 Ω at 4.5 V. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
• Constructed using lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.
• Utilizes a molded plastic green molding compound case with UL flammability classification rating 94V-0.

Single FETs, MOSFETs Applications

• Backlighting
• DC-DC Converters
• Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official Diodes Incorporated documentation before integration. Confirm package type matches SOT23 specifications and check date codes for manufacturing year alignment. Ensure storage conditions adhere to moisture sensitivity level 1 requirements per J-STD-020 standards to prevent damage during soldering processes.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring low input capacitance and fast switching speeds within a 50 V voltage limit. Evaluate thermal constraints carefully, as power dissipation capabilities decrease significantly above 25°C ambient temperature. Consider the specific on-resistance values at intended gate drive voltages to ensure optimal efficiency in the target application design.

Single FETs, MOSFETs Part Context

This part belongs to the BSN20 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The manufacturer specializes in discrete, analog, and mixed-signal semiconductors. The product line targets various industries including automotive, communication, computing, and consumer electronics sectors.

Single FETs, MOSFETs Replacement Considerations

BSN20

Single FETs, MOSFETs FAQ

What is the maximum allowable gate-source voltage?

The absolute maximum rating for gate-source voltage is ±20 V.

How does the on-resistance vary with gate voltage?

The static drain-source on-resistance is 1.8 Ω when the gate-source voltage is 10 V, and increases to 2.0 Ω when the gate-source voltage is reduced to 4.5 V.