BSO150N03

BSO150N03

  • Description:MOSFET 2N-CH 30V 7.6A 8DSO
  • Series:OptiMOS™

SKU:cdc4024d199f Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 7.6A 8DSO
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7.6A
  • Rds On (Max) @ Id, Vgs:15mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id:2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1890pF @ 15V
  • Power - Max:1.4W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:PG-DSO-8
  • Grade:-
  • Qualification:-

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BSO150N03

Overview

The BSO150N03 is a dual N-channel power MOSFET from Infineon's OptiMOS 3M family, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current of 9.3 A at 25°C. The device exhibits a maximum on-resistance of 14.6 mΩ at 10 V gate drive and 18.2 mΩ at 4.5 V. Gate charge values are specified as 6.1 nC typ at 4.5 V and 12.6 nC typ at 10 V. Thermal resistance is rated at 50 K/W, with a power dissipation capacity of 2 W. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Dual configuration integrating two independent N-channel MOSFETs within a single compact SO-8 package for space-constrained designs.
  • OptiMOS 3M technology provides optimized trade-offs between low conduction losses and fast switching performance.
  • Enhanced thermal stability supports reliable operation across extended industrial temperature ranges.

Applications

  • Low-voltage DC-DC converter synchronous rectification stages
  • Motor control bridge circuits requiring compact dual-switch solutions
  • Power management units for automotive electronics

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix (e.g., G) matches design requirements. Check current lifecycle status as availability may vary. Ensure ESD handling protocols are followed during storage and assembly to prevent gate oxide damage.

Selection Notes

Select this component for applications requiring dual switches in a small footprint with moderate current handling. Compare RDS(on) specifications against system efficiency targets. Verify that the 30 V breakdown voltage exceeds peak circuit transients. Consider thermal management needs given the 2 W power dissipation limit in the SO-8 package.

Part Context

This part belongs to Infineon's OptiMOS 3M series, designed for efficient power switching in low-voltage environments. The dual configuration allows for half-bridge or high-side/low-side driving topologies without occupying separate board areas. It complements single-channel variants like BSO040N03MS by offering integrated symmetry for balanced circuit designs.

Replacement Considerations

Direct pin-compatible alternatives within the same family include BSO064N03S (single channel, GaN) or BSO040N03MS G (single channel). For dual-channel replacements, verify equivalent RDS(on) and current ratings. Cross-reference datasheets for thermal resistance and gate charge similarities to ensure circuit compatibility.

BSO150N03BSO150N03

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