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BSO200N03S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 7A 8DSO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO200N03S
- Description：MOSFET N-CH 30V 7A 8DSO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 8.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：6.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：840 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.56W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-DSO-8
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO200N03S
Single FETs, MOSFETs Overview
The BSO200N03S is an OptiMOS2 N-channel power transistor manufactured by Infineon Technologies. It features a 30 V drain-source voltage rating and supports a continuous drain current of 12 A. The device exhibits a maximum on-resistance of 20 mΩ at 10 V gate drive. It operates within a temperature range of -55 °C to +150 °C and dissipates up to 1.56 W of power. The component is housed in a surface-mount SOIC-8 package, designed for efficient thermal management in compact electronic circuits.
Single FETs, MOSFETs Feature Summary
- OptiMOS2 technology provides low conduction losses through minimized on-resistance.
- Enhanced ruggedness ensures reliable operation under standard switching conditions.
- Lead-free packaging complies with RoHS directives for environmental safety.
Single FETs, MOSFETs Applications
- DC-DC converter modules
- Power supply load switches
- Motor control interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'S' against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm end-of-life status with the manufacturer prior to design finalization. Ensure compatibility with existing PCB footprints for the SOIC-8 variant. Cross-reference thermal resistance values with your specific board layout constraints.
Single FETs, MOSFETs Selection Notes
Select this component when a 30 V N-channel solution with moderate current handling is required. Compare on-resistance and gate charge parameters against alternative OptiMOS generations for efficiency optimization. Evaluate thermal performance requirements against the 1.56 W dissipation limit. Consider package availability and lifecycle status for long-term production viability.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS2 family of power transistors from Infineon Technologies. It represents an earlier generation of silicon-based MOSFET technology compared to modern GaN or OptiMOS5 devices. The series focuses on cost-effective solutions for general-purpose power switching applications requiring robust performance in standard voltage ranges.
Single FETs, MOSFETs Replacement Considerations
BSO200N03SG is a lead-free variant of the same electrical specification. Verify pinout compatibility before substitution. Check updated datasheets for any changes in thermal characteristics or testing conditions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
