BSO211PNTMA1

Overview

The BSO211PNTMA1 is a dual P-channel power MOSFET from Infineon’s OptiMOS-P family, housed in an SO-8 package. It features a -20 V drain-source voltage rating and a continuous drain current of -4.7 A at 25°C. The device supports Super Logic Level operation with a maximum on-resistance of 67 mΩ at -4.5 V gate drive. Key electrical characteristics include a pulsed drain current of -18.8 A, avalanche energy capability of 28 mJ, and reverse diode dv/dt rating of -6 kV/µs. Thermal resistance from junction to soldering point is 50 K/W.

Feature Summary

• Dual P-channel configuration within a single compact package
• Enhancement mode operation rated for 2.5 V logic levels
• Avalanche rated for robustness against inductive load switching
• High dv/dt capability for fast switching applications

Applications

• Low-side switching in DC-DC converter circuits
• Motor control driver stages requiring dual channel integration
• Power management systems utilizing super logic level inputs

Procurement Notes

Verify the specific ordering code BSO211PNTMA1 against official Infineon documentation to ensure compatibility with required packaging and tape-and-reel specifications. Confirm that the SO-8 Q67042-S4064 designation matches your board layout requirements. Always check for updated datasheet revisions to validate thermal and electrical parameters before finalizing procurement orders.

Selection Notes

Select this component when a dual P-channel solution is required in a small footprint. The low RDS(on) at 2.5 V makes it suitable for battery-powered or logic-driven applications. Ensure the design accounts for the 150°C maximum junction temperature and verify that the PCB copper area meets the thermal dissipation requirements for the intended operating conditions.

Part Context

This part belongs to the OptiMOS-P series, which focuses on optimizing performance for low-voltage power switching. The dual configuration allows for space-saving designs in bridge drivers or synchronous rectification setups. The SO-8 package provides a balance between thermal performance and mounting density for surface-mount assembly processes.

Replacement Considerations

Direct replacements must match the -20 V rating, dual P-channel topology, and SO-8 package. Verify that any substitute maintains comparable RDS(on) values at 2.5 V and 4.5 V gate drives to ensure circuit compatibility without redesigning the gate drive network.