BSO220N03MDGXUMA1

Overview

The BSO220N03MDGXUMA1 is a dual N-channel OptiMOS™ 3 M-Series Power-MOSFET manufactured by Infineon Technologies. It features a PG-DSO-8 package and operates with a drain-source voltage of 30 V. The device supports a continuous drain current of 7.7 A at 25 °C, with a maximum on-resistance of 27 mΩ at VGS=4.5 V. It includes an integrated reverse diode and is qualified for consumer applications.

Feature Summary

• Dual N-channel configuration optimized for 5V driver applications
• Low figure of merit (FOM) suitable for high-frequency switching power supplies
• 100% avalanche tested for enhanced reliability

Applications

• Notebook power systems
• Video Graphics Array (VGA) circuits
• Point-of-load (POL) converters

Procurement Notes

Verify the component against official Infineon datasheets to confirm electrical parameters and package integrity. Ensure compliance with RoHS and halogen-free standards as specified in the product documentation. Check for moisture sensitivity levels prior to surface mount assembly processes.

Selection Notes

Select this component for designs requiring low on-resistance and efficient gate charge characteristics. The dual channel architecture allows for compact circuit layouts. Verify thermal management requirements based on the specific PCB footprint and ambient operating conditions.

Part Context

This part belongs to the OptiMOS™ 3 M-Series family, designed specifically for mobile and consumer electronics. It utilizes silicon technology and offers Pb-free plating. The device is housed in a standard PG-DSO-8 surface-mount package.

Replacement Considerations

BSO220N03MD G

FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 7.7 A at an ambient temperature of 25 °C.

Is the device avalanche tested?

Yes, the BSO220N03MDGXUMA1 undergoes 100% avalanche testing.

What is the typical gate charge total?

The typical total gate charge is 3.8 nC under standard test conditions.