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BSO220N03MSGXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 7A 8DSO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO220N03MSGXUMA1
- Description：MOSFET N-CH 30V 7A 8DSO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 8.6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.56W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-DSO-8
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO220N03MSGXUMA1
Single FETs, MOSFETs Overview
The BSO220N03MSGXUMA1 is a dual N-channel Power MOSFET from Infineon’s OptiMOS 3M series, housed in an 8-SOIC package. It features a 30V drain-source voltage rating and a continuous drain current of 7A to 7.7A. The device exhibits a low on-resistance of 21.6 mΩ with a gate charge of 7.8 nC. Operating temperatures range from -55°C to +150°C, with rise and fall times of 2.8 ns and 3.4 ns respectively.
Single FETs, MOSFETs Feature Summary
- Dual channel configuration for integrated circuit design
- OptiMOS 3M technology for optimized switching performance
- Enhancement mode operation with low threshold voltage
Single FETs, MOSFETs Applications
- Low-side switching applications
- General purpose power management circuits
- Automotive electronic modules
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'G' or 'GXUMA1' against the manufacturer's official documentation to ensure exact pinout and electrical parameter alignment. Confirm RoHS compliance status directly from the datasheet as regulatory requirements may vary by production batch. Ensure the selected packaging format matches the intended surface-mount assembly process requirements.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring dual N-channel isolation within a compact SOIC-8 footprint. Evaluate the 21.6 mΩ on-resistance against thermal dissipation limits at expected load currents. Consider the 7.8 nC gate charge for driver capability matching in high-frequency switching environments.
Single FETs, MOSFETs Part Context
This part belongs to Infineon’s OptiMOS 3M family, designed for automotive and industrial power applications. It utilizes silicon technology to provide robust performance in harsh environments. The dual-channel architecture allows for space-efficient implementation in bridge drivers and motor control stages.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other OptiMOS 3M variants such as BSO220N03MD G for identical electrical specifications in alternative packages. Verify pin compatibility before substituting with generic dual N-channel MOSFETs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
