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BSO4410 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 11.1A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO4410
- Description：MOSFET N-CH 30V 11.1A 8SO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 11.1A, 10V
- Vgs(th) (Max) @ Id：2V @ 42µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1280 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO4410
Single FETs, MOSFETs Overview
The BSO4410 is a small-signal N-channel enhancement mode MOSFET in an SO-8 package. It features a 30 V drain-source voltage and a continuous drain current of 11.1 A at 25°C, dropping to 8.9 A at 70°C. The maximum on-state resistance is 13 mΩ at 10 V gate drive. Power dissipation is rated at 2.5 W at 25°C. The device supports avalanche energy of 126 mJ and reverse diode dv/dt of 6 kV/µs. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Logic level operation for direct interface with standard logic circuits
- Avalanche rated capability for robustness against transient overvoltages
- High reverse diode dv/dt rating suitable for fast switching applications
Single FETs, MOSFETs Applications
- Fast switching power supply circuits
- Low voltage DC-DC converter stages
- General purpose low-side switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code Q67042-S4096 matches the required SO-8 variant. Confirm that the preliminary datasheet status does not impact long-term availability or final parameter validation for your design. Ensure thermal management aligns with the specified junction-to-soldering point resistance values.
Single FETs, MOSFETs Selection Notes
Select this component when a 30 V N-channel MOSFET with high current capability in a compact surface-mount package is required. The logic level threshold simplifies gate drive requirements. Consider the thermal derating curves for ambient temperatures above 25°C to ensure safe operating area compliance during continuous operation.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS/G01 family of small-signal transistors. It utilizes planar technology optimized for low on-resistance and fast switching speeds within the SO-8 form factor. The device is designed for cost-effective solutions in consumer electronics and industrial control systems requiring reliable low-voltage switching.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility and thermal resistance values when substituting. Verify that alternative parts meet the 30 V breakdown and 11.1 A current requirements. Ensure the replacement supports the same SO-8 footprint and logic level gate drive characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
