BSO4420

Single FETs, MOSFETs Overview

The BSO4420 is an N-Channel OptiMOS/Ge2 small-signal transistor in SO-8 package. It features a drain-source voltage of 30 V, continuous drain current of 13 A at 25°C, and pulsed drain current of 52 A. The maximum on-resistance is 7.8 mΩ at VGS=10V and ID=13A. Power dissipation is 2.5 W at 25°C. Avalanche energy rating is 230 mJ. Reverse diode dv/dt is rated at 6 kV/µs. Operating temperature range is -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Logic level gate drive capability for efficient control
• Optimized figure of merit combining low on-resistance and gate charge
• Rated for avalanche energy and high dv/dt switching events

Single FETs, MOSFETs Applications

• Fast switching power applications
• Automotive electronics requiring robust transient handling
• Industrial motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67042-S4027 matches the required SO-8 package variant. Confirm that the component meets the intended thermal management requirements given the 2.5 W power dissipation limit at 25°C ambient. Ensure the application circuit respects the 30 V drain-source breakdown voltage and 13 A continuous current limits under all operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance N-channel MOSFET with logic-level compatibility is required in an SO-8 package. Consider its avalanche and dv/dt ratings for environments with significant inductive load switching. Evaluate thermal resistance characteristics against the expected PCB footprint and cooling area to ensure safe junction temperatures during operation.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS/Ge2 small-signal transistor portfolio. It utilizes trench technology to achieve low RDS(on) and fast switching speeds within a compact surface-mount package. The Ge2 generation focuses on optimizing the trade-off between conduction losses and gate drive requirements for general-purpose power switching.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 30 V, 13 A, SO-8 N-channel specifications. Verify equivalent RDS(on), gate charge, and thermal resistance values. Ensure any replacement also supports the required avalanche and dv/dt performance if present in the original design.

Single FETs, MOSFETs FAQ

What is the maximum avalanche energy rating?

The single pulse avalanche energy rating is 230 mJ at ID=13 A, VDD=25 V, and RGS=25 Ω.

Is the reverse diode rated for high dv/dt?

Yes, the reverse diode is rated for a dv/dt of 6 kV/µs under specified test conditions.