BSO4804

$1.24

Description：MOSFET 2N-CH 30V 8A 8DSO
Series：OptiMOS™

SKU:c3fb58d0e0c9 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：870pF @ 25V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：PG-DSO-8
Grade：-
Qualification：-

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BSO4804

Overview

The BSO4804 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS/G01 family, housed in a PG-DSO-8-7 package. It features a drain-source voltage of 30 V and a continuous drain current of 8 A at 25°C. The device exhibits a maximum on-state resistance of 20 mΩ at 10 V gate drive. Key electrical characteristics include avalanche and dv/dt ratings, with a single-pulse avalanche energy capability of 90 mJ. The component supports logic level operation and operates within a temperature range of -55°C to +150°C.

Feature Summary

Logic Level Enhancement Mode
Avalanche Rated
dv/dt Rated

Applications

Fast switching applications
Power management circuits
Motor control systems

Procurement Notes

Verify the specific ordering code Q67042-S4097 against official Infineon documentation to ensure correct part identification. Confirm that the PG-DSO-8-7 package marking '4804' matches your design requirements. Check for RoHS compliance status and Pb-free lead plating specifications relevant to your manufacturing process. Ensure thermal management designs account for the specified junction-to-soldering point thermal resistance values.

Selection Notes

Select this component for applications requiring robust switching performance with high avalanche energy tolerance. The low gate charge combined with low on-resistance makes it suitable for efficient power conversion. Consider the 30 V rating and 8 A current capacity when designing circuits with moderate voltage and current demands. Verify compatibility with logic-level gate drivers due to the specified threshold voltage range.

Part Context

This component belongs to Infineon's OptiMOS/G01 small-signal transistor portfolio. It represents an earlier generation of trench technology optimized for general-purpose power switching. The PG-DSO-8-7 package provides a compact surface-mount solution suitable for automated assembly processes in consumer and industrial electronics.