BSO4804T

Overview

The BSO4804 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS/G01 family, housed in a PG-DSO-8-7 package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 8 A at 25°C. The device exhibits a low on-state resistance of 20 mΩ at 10 V gate drive. Key electrical parameters include a total gate charge of 17 nC, input capacitance of 870 pF, and output capacitance of 370 pF. It supports pulsed drain currents up to 32 A and single-pulse avalanche energy of 90 mJ.

Feature Summary

• Logic level operation for direct interface with standard logic drivers
• Avalanche rated capability for robustness against inductive load switching
• dv/dt rated performance suitable for high-speed commutation applications
• Optimized gate charge and on-resistance product for efficient switching

Applications

• Fast switching power conversion circuits
• Synchronous rectification in DC-DC converters
• Motor control driver stages
• Low voltage power management systems

Procurement Notes

Verify the specific ordering code Q67042-S4097 matches the required PG-DSO-8-7 package variant. Confirm RoHS compliance status and Pb-free lead plating specifications align with assembly requirements. Check for any obsolete status or lifecycle notices as the datasheet revision dates back to 2005. Ensure thermal management designs account for the specified junction-to-soldering point thermal resistance values under actual PCB footprint conditions.

Selection Notes

Select this component for applications requiring 30 V breakdown with high current handling in a surface-mount format. The logic-level threshold simplifies gate drive design compared to standard threshold devices. Consider the thermal resistance characteristics when designing PCB copper areas for heat dissipation. Evaluate the avalanche energy rating if the application involves significant inductive loads or potential voltage spikes during turn-off.

Part Context

This part belongs to Infineon's OptiMOS/G01 series, representing early generation optimized power MOSFET technology. The PG-DSO-8-7 package provides a compact solution for moderate power applications. The device integrates monolithic construction for reliability. It serves as a foundational component for low-voltage power switching architectures where efficiency and switching speed are prioritized alongside cost-effectiveness.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum single-pulse avalanche energy the BSO4804 can withstand?

The device is rated for 90 mJ of single-pulse avalanche energy under conditions of ID=8 A, VDD=25 V, and RGS=25 Ω.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage decreases as junction temperature increases, ranging from a minimum of 1.2 V to a maximum of 2 V at 25°C, with typical behavior showing negative temperature coefficient.

What is the reverse diode forward recovery time specification?

The reverse recovery time (trr) is typically 24 ns and maximally 30 ns when measured at VR=15 V, IF=IS, and diF/dt=100 A/µs.