BSO612CV

Overview

The Infineon BSO612CV is a SIPMOS small-signal transistor featuring dual N- and P-channel enhancement mode MOSFETs in an SO-8 package. The N-channel device supports a maximum drain-source voltage of 60 V, continuous drain current of 3 A, and on-state resistance up to 0.12 Ω. The P-channel counterpart provides -60 V breakdown, -2 A current capability, and resistance up to 0.3 Ω. Both channels are rated for avalanche energy and high dv/dt switching.

Feature Summary

• Dual N- and P-channel configuration within a single surface-mount package
• Enhanced avalanche energy rating for robust transient handling
• High dv/dt rated reverse diode characteristics for fast switching applications

Applications

• Motor control bridge drivers
• Power supply output stages
• General-purpose low-voltage switching circuits

Procurement Notes

Verify the specific ordering code Q67041-S4015 against the datasheet to ensure correct component revision. Confirm that the SO-8 footprint matches the design requirements. Check for any end-of-life notices or alternative recommendations from Infineon, as this is a legacy product series.

Selection Notes

Select this component when a matched pair of N- and P-channel logic-level MOSFETs is required in a compact form factor. Ensure the application voltage does not exceed 60 V and current demands fit within the 3 A (N) and 2 A (P) limits. Consider thermal management for power dissipation near the 2 W limit.

Part Context

Part of the Infineon SIPMOS family designed for small-signal and low-power applications. It integrates complementary transistors to simplify circuit layout for half-bridge or full-bridge topologies. The technology focuses on reliability through avalanche and dv/dt ratings.

Replacement Considerations

Check for direct cross-references with other dual MOSFET packages such as the BSC series or equivalent offerings from other manufacturers. Verify pinout compatibility and electrical parameter margins before substitution.

FAQ

What is the maximum avalanche energy rating?

The N-channel device is rated for 47 mJ and the P-channel for 70 mJ under specified test conditions.

Is the gate threshold voltage symmetric?

Yes, both channels have a similar threshold voltage range, typically between 2.1 V and 4 V for N-channel and -2.1 V to -4 V for P-channel.