BSO612CVGXUMA1

$0.87

Description：MOSFET N/P-CH 8-SOIC
Series：*

SKU:d36278a5e933 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 8-SOIC
Series：*
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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BSO612CVGXUMA1

Overview

The BSO612CVGXUMA1 is a SIPMOS small-signal transistor featuring dual N- and P-channel enhancement mode MOSFETs in a PG-DSO-8 package. It provides a continuous drain current of 3 A for the N-channel and -2 A for the P-channel, with a maximum drain-source voltage of ±60 V. The device includes avalanche-rated capabilities and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Dual N- and P-channel enhancement mode configuration
Avalanche rated capability for robust operation
Pb-free lead plating compliant with RoHS standards

Applications

General-purpose switching applications
Small-signal power management circuits
Automotive electronic systems requiring high reliability

Procurement Notes

Verify the complete part number including suffixes against official Infineon documentation to ensure correct package and tape-and-reel specifications. Confirm that the specific ordering code matches the required manufacturing revision and compliance certifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring complementary N- and P-channel MOSFETs in a compact surface-mount footprint. Ensure thermal management strategies account for the specified power dissipation limits at varying ambient temperatures to maintain safe operating area boundaries.

Part Context

This component belongs to Infineon's SIPMOS family of small-signal transistors. It integrates both N-channel and P-channel technologies into a single package, offering a space-efficient solution for applications needing paired switching elements without occupying separate board real estate.