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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 3.1A/2A 8DSO
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.1A, 2A
- Rds On (Max) @ Id, Vgs：110mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：22.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：380pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8
- Grade：-
- Qualification：-
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Overview
The BSO615CGHUMA1 is a SIPMOS small-signal transistor featuring dual N- and P-channel enhancement mode MOSFETs in a PG-DSO-8 package. It supports a drain-source voltage of ±60 V with continuous drain currents of 3.1 A (N-channel) and -2 A (P-channel). The device exhibits low on-state resistance, typically 0.11 Ω for the N-channel and 0.3 Ω for the P-channel at 10 V gate drive. Rated for power dissipation up to 2 W at 25 °C, it operates within a junction temperature range of -55 °C to +150 °C and includes avalanche energy ratings.
Feature Summary
- Dual N- and P-channel configuration in a single surface-mount package
- Logic level operation compatible with standard digital control signals
- Avalanche rated capability for robust transient handling
- RoHS compliant construction with lead-free plating
Applications
- Low-side and high-side switching in DC-DC converters
- Motor driver output stages
- Load switch applications requiring complementary channel pairs
Procurement Notes
Verify the component marking '615C' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the specified tape and reel packaging requirements. Confirm that the RoHS compliance status aligns with current environmental regulations for the target assembly process.
Selection Notes
Select this component when a compact solution requires matched N- and P-channel characteristics. Evaluate the thermal resistance values against the expected ambient temperature and PCB copper area. Consider the gate charge parameters for driving circuit design to ensure adequate switching speed without excessive drive current demands.
Part Context
This part belongs to Infineon's SIPMOS family of small-signal transistors. It utilizes silicon technology optimized for general-purpose switching. The PG-DSO-8 package provides a balance between thermal performance and board space efficiency compared to larger power packages.
FAQ
What is the maximum avalanche energy rating?
The single pulse avalanche energy is rated at 47 mJ for the N-channel and 70 mJ for the P-channel under specific test conditions.
How does the on-resistance vary with temperature?
The drain-source on-resistance increases as the junction temperature rises, following the typical positive temperature coefficient characteristic of silicon MOSFETs.
