BSO615N

Overview

The BSO615N-G is a single N-channel enhancement mode MOSFET from the Infineon SIPMOS series, housed in an SO-8 surface-mount package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 2.6 A at 25°C. The device exhibits a maximum on-resistance of 150 mΩ at 4.5 V gate drive. Key electrical parameters include a typical gate charge of 14 nC at 10 V, input capacitance of 300 pF, and output capacitance of 90 pF. Thermal resistance junction-to-case is rated at 35 K/W, with a total power dissipation capability of 2 W.

Feature Summary

• Enhancement-mode operation for efficient switching control
• Low on-resistance optimized for low-voltage applications
• Robust thermal performance within standard surface-mount packaging

Applications

• Low-voltage DC-DC converter circuits
• Load switching in industrial control systems
• Battery protection units

Procurement Notes

Verify the specific ordering suffix to confirm availability status, as some variants may be marked as production discontinued. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing standards. Cross-reference the exact part number with official Infineon documentation to validate the active status and any potential obsolescence notices before finalizing procurement plans.

Selection Notes

Select this component for designs requiring a 60 V rating with moderate current handling capabilities in a compact SO-8 footprint. Consider the 150 mΩ on-resistance at 4.5 V gate drive when evaluating conduction losses. Verify that the thermal management solution can handle the 2 W power dissipation limit under expected operating conditions.

Part Context

This device belongs to the Infineon SIPMOS family, which focuses on cost-effective silicon MOSFET solutions for general-purpose power switching. The SO-8 package provides a balance between thermal performance and board space efficiency, suitable for applications where higher power densities are not the primary design constraint compared to other larger packages.

Replacement Considerations

Check for direct pin-compatible alternatives within the same SIPMOS series or OptiMOS families. Verify that any substitute maintains the 60 V breakdown voltage and comparable on-resistance characteristics to ensure circuit performance consistency.